Processors, lithography, memory and the physics of computation.
A Cornell-led team made conductive aluminum gallium oxide films with bandgaps above 7 eV on sapphire, beyond cubic boron nitride. A diode and a transistor work, but the devices are still proofs of concept.
KAIST-led researchers patterned a conductive metal–organic framework into working transistor gates on three semiconductors. Lower switching voltages are the goal, but the paper has not shown them yet.
At its 21 October technology webinar, Micron said it will stretch the 6F² planar cell with wafer bonding at 1ε and High-NA EUV later, then go to 3D DRAM. It rejected 4F² layouts.
